Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 700V
Current - Continuous Drain (Id) @ 25°C 6.2A (Tc)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 3.1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) @ Vds 1400pF @ 25V
Power - Max 3.13W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB