Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 12.4A (Tc)
Rds On (Max) @ Id, Vgs 190 mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 39nC @ 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 25V
Power - Max 56W
Mounting Type Through Hole
Package / Case SC-94