MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:214W; Transistor Case Style:TO-3P; No. of Pins:3; Operating Temperature Max:175Â
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Rds On (Max) @ Id, Vgs 23 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) @ Vds 3300pF @ 25V
Power - Max 214W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
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INR 1561.6
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Price : 1561.6