Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 13.5A (Tc)
Rds On (Max) @ Id, Vgs 480 mOhm @ 6.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 56nC @ 10V
Input Capacitance (Ciss) @ Vds 2055pF @ 25V
Power - Max 218W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3