Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 9.8A (Tc)
Rds On (Max) @ Id, Vgs 1.05 Ohm @ 4.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 71nC @ 10V
Input Capacitance (Ciss) @ Vds 2700pF @ 25V
Power - Max 240W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3