MOSFET, N-CH, 30V, SSSMINI3-F2-B; Transistor Polarity:N Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs:1V; Power Dissipation Pd:100mW; Transistor Case Style:SOT-723; No. of Pins:3; Operating Tem
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100mA
Rds On (Max) @ Id, Vgs 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 1µA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 12pF @ 3V
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-723
Buying Option 1
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INR 262.3
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Order Multiple:1
Price : 262.3