MOSFET, N/P-CH, 30V, SSMINI6-F3-B; Transistor Polarity:N and P Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs:1V; Power Dissipation Pd:125mW; Transistor Case Style:SOT-666; No. of Pins:6; Operat
Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100mA
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds -
Power - Max -
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
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INR 244
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Price : 244