Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12.5A (Ta)
Rds On (Max) @ Id, Vgs 10.5 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 35nC @ 5V
Input Capacitance (Ciss) @ Vds 2409pF @ 15V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 30-WFBGA