Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
Rds On (Max) @ Id, Vgs 18 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1127pF @ 10V
Power - Max 1.6W
Mounting Type Surface Mount
Package / Case 9-WFBGA