MOSFET, P, SC89 SMD; Transistor Polarity:P Channel; Continuous Drain Current Id:150mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:625mW; Transistor Case Style:SC-89; No. of Pins:3; Operating Temperature Ma
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 150mA (Ta)
Rds On (Max) @ Id, Vgs 8 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 1.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds 100pF @ 10V
Power - Max 446mW
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
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INR 292.8
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Price : 292.8