Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.4A
Rds On (Max) @ Id, Vgs 35 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 21nC @ 5V
Input Capacitance (Ciss) @ Vds 1465pF @ 10V
Power - Max 600mW
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)