Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs 5.7 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) @ Vds 2525pF @ 15V
Power - Max 80W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA