Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 12.1A (Tc)
Rds On (Max) @ Id, Vgs 46 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 10nC @ 10V
Input Capacitance (Ciss) @ Vds 1130pF @ 25V
Power - Max 8.9W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA