MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; Operating Temperature Max:150°C
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.4A
Rds On (Max) @ Id, Vgs 130 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 3.5nC @ 10V
Input Capacitance (Ciss) @ Vds 205pF @ 15V
Power - Max 1.1W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Buying Option 1
1
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INR 406.87
10
-
INR 317.81
100
-
INR 204.96
1000
-
INR 164.09
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 406.87
Buying Option 2
1
-
INR 408.7
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 408.7