FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.4A |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 3.5nC @ 10V |
Input Capacitance (Ciss) @ Vds | 205pF @ 15V |
Power - Max | 1.1W |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |