Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Rds On (Max) @ Id, Vgs 130 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 8.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds 405pF @ 10V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
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INR 603.9
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 603.9