MOSFET, PP CH, 80V, 2.1A, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.1A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.148ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power Dissipation Pd:3.1W; Transistor Case Style:SOIC; No. of Pins:8; Ope
Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 2.1A
Rds On (Max) @ Id, Vgs 183 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 19nC @ 10V
Input Capacitance (Ciss) @ Vds 879pF @ 40V
Power - Max 1.6W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
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INR 847.9
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Order Multiple:1
Price : 847.9