MOSFET, DUAL, NP, SMD, 8-SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:670mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; Operating
Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 30V, 20V
Current - Continuous Drain (Id) @ 25°C 5.5A, 4A
Rds On (Max) @ Id, Vgs 30 mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 28nC @ 4.5V
Input Capacitance (Ciss) @ Vds 900pF @ 10V
Power - Max 900mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 768.6
10
-
INR 616.1
100
-
INR 473.36
500
-
INR 418.46
1000
-
INR 330.62
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 768.6
Buying Option 2
1
-
INR 768.6
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 768.6