Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 30V, 12V
Current - Continuous Drain (Id) @ 25°C 4.3A, 6.8A
Rds On (Max) @ Id, Vgs 55 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 7.7nC @ 5V
Input Capacitance (Ciss) @ Vds 530pF @ 15V
Power - Max 900mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)