MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Ma
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 21A
Rds On (Max) @ Id, Vgs 3.6 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) @ Vgs 91nC @ 10V
Input Capacitance (Ciss) @ Vds 3610pF @ 15V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
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INR 866.2
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Order Multiple:1
Price : 866.2