MOSFET, P CH, -20V, -10A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-10A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Operati
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Rds On (Max) @ Id, Vgs 13 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 74nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4951pF @ 10V
Power - Max 1.2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 479.46
10
-
INR 479.46
100
-
INR 439.2
500
-
INR 405.65
1000
-
INR 376.98
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 479.46
Buying Option 2
1
-
INR 915
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 915