MOSFET, N CH, 30V, 13A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperatur
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Rds On (Max) @ Id, Vgs 9 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 14nC @ 5V
Input Capacitance (Ciss) @ Vds 1108pF @ 15V
Power - Max 1.2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)