Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 10.8A (Ta)
Rds On (Max) @ Id, Vgs 13 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) @ Vds 2005pF @ 20V
Power - Max 1.6W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
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INR 945.5
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 945.5