Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
Rds On (Max) @ Id, Vgs 78 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 53nC @ 10V
Input Capacitance (Ciss) @ Vds 1884pF @ 75V
Power - Max 1.8W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad