Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.2A
Rds On (Max) @ Id, Vgs 50 mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 19nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1240pF @ 10V
Power - Max 800mW
Mounting Type Surface Mount
Package / Case 8-SSOT, SuperSOT-8