Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 14A, 11A
Rds On (Max) @ Id, Vgs 13.2 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) @ Vds 920pF @ 15V
Power - Max 1.3W, 1.1W
Mounting Type Surface Mount
Package / Case 14-SOIC (0.154", 3.90mm Width)