MOSFET, N-CH, DUAL, 25V/12V, 8PQFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:2W; Transistor Case Style:Power 33; No. of Pins:8; Op
Specification
FET Type 2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 13A, 27A
Rds On (Max) @ Id, Vgs 6 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 19nC @ 10V
Input Capacitance (Ciss) @ Vds 1240pF @ 13V
Power - Max 800mW, 900mW
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Buying Option 1
1
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INR 1970.3
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 1970.3