MOSFET, N-CH, 100V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Dissipation Pd:104W; Transistor Case Style:Power 56; No. of Pins:8; Operating Tem
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 58nC @ 10V
Input Capacitance (Ciss) @ Vds 4120pF @ 50V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
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INR 1555.5
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Price : 1555.5