MOSFET,N CH,100V,12.4A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.9V; Power Dissipation Pd:104W; Transistor Case Style:Power 56; No. of Pins:8; Operatin
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 12.4A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 55nC @ 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 50V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-PQFN, Power56
Buying Option 1
1
-
INR 1335.9
10
-
INR 1073.6
100
-
INR 866.2
500
-
INR 756.4
1000
-
INR 646.6
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 1335.9
Buying Option 2
1
-
INR 1335.9
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 1335.9