Specification
FET Type 2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 17.5A, 30A
Rds On (Max) @ Id, Vgs 5 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) @ Vds 1570pF @ 13V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN