Specification
FET Type 4 N-Channel (H-Bridge)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.1A
Rds On (Max) @ Id, Vgs 110 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 5nC @ 10V
Input Capacitance (Ciss) @ Vds 215pF @ 15V
Power - Max 1.9W
Mounting Type Surface Mount
Package / Case 12-WDFN Exposed Pad
Buying Option 1
1
-
INR 1659.2
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 1659.2