MOSFET, NNPP CH, MLP 4.5X5; Transistor Polarity:Dual N and Dual P Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:22W; Transistor Case Style:MLP; No. of Pins:12; Opera
Specification
FET Type 2 N and 2 P-Channel (H-Bridge)
Drain to Source Voltage (Vdss) 100V, 80V
Current - Continuous Drain (Id) @ 25°C 3.4A, 2.6A
Rds On (Max) @ Id, Vgs 110 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 5nC @ 10V
Input Capacitance (Ciss) @ Vds 210pF @ 50V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 12-WDFN Exposed Pad
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INR 1708
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Price : 1708