MOSFET, N-CH, 100V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0112ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.9V; Power Dissipation Pd:54W; Transistor Case Style:Power 33; No. of Pins:8; Operating Temp
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs 14 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 22nC @ 10V
Input Capacitance (Ciss) @ Vds 1290pF @ 50V
Power - Max 2.3W
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Buying Option 1
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INR 1488.4
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Order Multiple:1
Price : 1488.4