MOSFET, DUAL, P, MLP6; Transistor Polarity:P Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:-1V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.4W; Transistor Case Style:µFET; No. of Pins:8; Operating Temperature Max
Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.1A
Rds On (Max) @ Id, Vgs 95 mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 10nC @ 4.5V
Input Capacitance (Ciss) @ Vds 540pF @ 10V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Buying Option 1
1
-
INR 522.16
10
-
INR 407.48
100
-
INR 262.91
1000
-
INR 210.45
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 522.16
Buying Option 2
1
-
INR 488
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 488