MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; Operating Temperature Max:150
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.2A
Rds On (Max) @ Id, Vgs 180 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 5nC @ 4.5V
Input Capacitance (Ciss) @ Vds 330pF @ 10V
Power - Max 480mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Buying Option 1
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INR 280.6
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 280.6