| FET Type | MOSFET P-Channel, Metal Oxide |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 3.3A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 10nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 270pF @ 10V |
| Power - Max | 900mW |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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