MOSFET, N CH, 100V, 36A, TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Dissipation Pd:62W; Transistor Case Style:TO-252; No. of Pins:3; Operating Te
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs 24 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 19nC @ 10V
Input Capacitance (Ciss) @ Vds 1035pF @ 50V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Buying Option 1
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INR 890.6
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Price : 890.6