MOSFET, P, SMD, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:3.8W; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperatur
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs 20 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 24nC @ 5V
Input Capacitance (Ciss) @ Vds 1715pF @ 15V
Power - Max 1.6W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Buying Option 1
1
-
INR 658.8
10
-
INR 527.65
100
-
INR 405.04
500
-
INR 358.07
1000
-
INR 283.04
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 658.8
Buying Option 2
1
-
INR 652.7
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 652.7