MOSFET, N CH, 30V, 21A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:28W; Transistor Case Style:TO-252; No. of Pins:3; Operating Tem
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 21A (Ta)
Rds On (Max) @ Id, Vgs 35 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 7nC @ 5V
Input Capacitance (Ciss) @ Vds 462pF @ 15V
Power - Max 1.3W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Buying Option 1
1
-
INR 488
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 488