MOSFET, NP-CH, 30V, 6-SSOT, RL; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; Op
Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.5A, 2A
Rds On (Max) @ Id, Vgs 95 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 6.6nC @ 10V
Input Capacitance (Ciss) @ Vds 282pF @ 15V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Buying Option 1
1
-
INR 295.85
10
-
INR 247.05
100
-
INR 150.67
1000
-
INR 116.51
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 295.85
Buying Option 2
1
-
INR 292.8
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 292.8