MOSFET, DUAL, PP, SUPERSOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; Operati
Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.9A
Rds On (Max) @ Id, Vgs 170 mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 4.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds 441pF @ 10V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Buying Option 1
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INR 317.2
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Price : 317.2