MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No. of Pins:2; Operating Temperature
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 34A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs 1.9 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 265nC @ 10V
Input Capacitance (Ciss) @ Vds 11400pF @ 15V
Power - Max 300W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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INR 1775.1
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Price : 1775.1