Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 73A
Rds On (Max) @ Id, Vgs 3.3 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 129nC @ 10V
Input Capacitance (Ciss) @ Vds 6010pF @ 25V
Power - Max -
Mounting Type Through Hole
Package / Case EPM15