MOSFET, N-CH, 60V, SMINI6-F3-B; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:150mW; Transistor Case Style:SOT-363; No. of Pins:6; Operatin
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100mA
Rds On (Max) @ Id, Vgs 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 1µA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 12pF @ 3V
Power - Max 150mW
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Buying Option 1
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INR 286.7
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Order Multiple:1
Price : 286.7