FETs -Single, Arrays and Modules,40V,33A (Ta)
Specification
FET Type GaNFET N-Channel, Gallium Nitride
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 33A (Ta)
Rds On (Max) @ Id, Vgs 4 mOhm @ 33A, 5V
Vgs(th) (Max) @ Id 2.5V @ 9mA
Gate Charge (Qg) @ Vgs 11.6nC @ 5V
Input Capacitance (Ciss) @ Vds 1100pF @ 20V
Power - Max -
Mounting Type Surface Mount
Package / Case Die