Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 200mA
Rds On (Max) @ Id, Vgs 6 Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 29pF @ 4V
Power - Max 425mW
Mounting Type Surface Mount
Package / Case 3-XFDFN