Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 7.2A
Rds On (Max) @ Id, Vgs 25 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) @ Vgs 14nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1643pF @ 20V
Power - Max 810mW
Mounting Type Surface Mount
Package / Case 8-PowerVDFN