Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.9A
Rds On (Max) @ Id, Vgs 70 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 5.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds 563pF @ 25V
Power - Max 1.1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 207.4
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 207.4