Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
Rds On (Max) @ Id, Vgs 1 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 800nC @ 8V
Input Capacitance (Ciss) @ Vds 46.1pF @ 10V
Power - Max 400mW
Mounting Type Surface Mount
Package / Case 3-XDFN
Buying Option 1
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INR 244
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Order Multiple:1
Price : 244