Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Rds On (Max) @ Id, Vgs 70 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 2.9nC @ 4.5V
Input Capacitance (Ciss) @ Vds 210pF @ 10V
Power - Max 920mW
Mounting Type Surface Mount
Package / Case 6-VFBGA, WLBGA