Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9.2A (Ta)
Rds On (Max) @ Id, Vgs 16 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200µA
Gate Charge (Qg) @ Vgs 113nC @ 10V
Input Capacitance (Ciss) @ Vds 4748pF @ 10V
Power - Max 2.05W
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Buying Option 1
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INR 244
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Order Multiple:1
Price : 244